NXP Semiconductors announced the launch of PBSM5240PF, an
ultra-compact Medium Power transistor and N-channel Trench MOSFET housed in a
leadless DFN2020-6 (SOT1118) plastic package.
Measuring only 2 x 2 mm and with a height of just 0.65
mm, the DFN2020-6 (SOT1118) has been designed in response to the industry trend
for miniaturization in high-performance consumer products such as mobile
devices.
As one of the first power management solutions on the
market to integrate a low VCE(sat) BISS transistor and Trench MOSFET into a
2-in-1 product, the PBSM5240PF saves space on the PCB, while delivering high
electrical performance.
Compared to conventional solutions, which require two
packages for the Breakthrough in Small Signal (BISS)/MOSFET solution, the
PBSM5240PF offers a more than 50 percent reduction in footprint and more than
10 percent decrease in package height.
Also, because the DFN2020-6 (SOT1118) package
incorporates a heat sink, the device delivers 25 percent improved thermal
performance, which leads to higher currents up to 2 A and less power
consumption.
With a maximum voltage of 40 volts, this integrated
package is ideally suited for today’s miniaturized, slimline mobile devices,
where height and board space are serious design constraints and every
millimeter is at a premium,” said Joachim Stange, product manager, NXP Semiconductors.
Key features of the PBSM5240PF BISS transistor and
N-channel Trench MOSFET include: High collector current capability IC and ICM;
High collector current gain (hFE) at high IC; High energy efficiency due to
less heat generation; Very low collector-emitter saturation voltage VCEsat and
DFN2020-6 package in 2 x 2 mm requires less Printed-Circuit Board (PCB) area.
The PBSM5240PF is used as part of the charging circuit in
portable batteries for cell phones, MP3 players or other portable devices. It
can also be used in load switch or battery-driven devices that require
best-in-class thermal performance for higher currents with a tiny footprint.
By Telecomlead.com Team
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