Freescale Semiconductor has introduced an RF power
LDMOS transistor that combines the industry’s highest output power and
efficiency with the greatest ruggedness of any competitive device in its class
designed for UHF broadcast television applications.
The latest addition to Freescale’s family of RF power
LDMOS transistors, the MRFE6VP8600H, delivers 39 percent greater output power
than its predecessor and is designed to deliver maximum performance for many
key digital transmission standards including ATSC, DVB-T and ISDB-T.
The MRFE6VP8600H provides significant benefits for
television transmitter manufacturers and broadcasters. For example, the
transistor delivers 125W of linear power (more than 600W peak envelope power)
over the entire broadcast band, with exceptional efficiency (typically 30
percent at 860 MHz and up to 45 percent when employed in a Doherty
The UHF frequency band ranges from 470 MHz to 860 MHz and
is used by broadcasters to transmit television signals over the air. The vast
majority of television stations currently broadcasting in digital are using the
The new MRFE6VP8600H reinforces Freescale’s continued
commitment to delivering the outstanding performance and efficiency our
customers need to thrive, even within industries facing extremely stringent
market requirements,” said Ritu Favre, vice president and general manager, RF
This new offering additionally underscores Freescale’s
hallmark of leveraging its deep understanding of networking markets to generate
performance and efficiency gains via intelligent, system-level design
processes,” Favre added.
The MRFE6VP8600H’s higher RF output and greater
efficiency enable a reduction in the total number of transistors and combiner
stages needed for a given output power, helping to simplify transmitter design
and improve reliability when compared to previous generation solid-state
systems. A transmitter based on the MRFE6VP8600H can use up to 15 percent less
power than previous generations, leading to substantial operating cost savings.
The MRFE6VP8600H is the most rugged RF power LDMOS
transistor in its class. When driven to its full rated RF output power, this
device will not degrade in performance when driving an impedance mismatch
(VSWR) greater than 65:1, at all phase angles, or when driven by twice its
rated input power.
The transistor’s ruggedness makes it far more reliable
under adverse conditions such as antenna icing, transmission line failure or
operator error, even with drive peaks created by predistortion systems.
In addition, the MRFE6VP8600H easily tolerates the
out-of-band reflective load conditions caused by highly selective channel
filters and the high peak-to-average ratio (PAR) characteristic of digital
transmission schemes employing higher-order modulation techniques such as DVB-T
(8k OFDM). The enhanced ruggedness characteristics of the MRFE6VP8600H also
make it possible to employ simplified transmitter protection circuits.
Freescale Semiconductor recently announced the
first “base station-on-chip” product built on its QorIQ Qonverge
The new QorIQ Qonverge PSC9132 system-on-chip (SoC) for
picocell and PSC9130/31 SoCs for femtocell base stations share a single,
scalable architecture that simultaneously supports multiple air interfaces,
providing operators and OEMs “future-proof”, integrated heterogeneous
solutions that help minimize power consumption, cost and design time.
By Telecomlead.com Team