NXP expands LDMOS RF power transistor portfolio for wireless base stations

Telecom Lead Europe: NXP Semiconductors has expanded its
LDMOS RF power transistor portfolio for wireless base stations.

The new generation power transistor portfolio features
linearized efficiency, gain and wideband capability.

It covers all main cellular frequency bands between 700
to 2700 MHz.

The new version LDMOS process increases the efficiency of
Doherty amplifiers by three points and improves gain by 1 dB.

The Gen8 LDMOS RF power transistors offer up to 115 MHz
of signal bandwidth to enable full-band operation for all cellular frequency
bands, including GSM, W-CDMA and LTE, as well as unprecedented video bandwidth
up to 300 MHz.

“With optimized packaging, die design, and input and
output match structures, NXP Gen8 is emerging as the platform of choice for
multi-standard wideband Doherty power amplifiers that are highly compact,
cost-effective and power-efficient,” said Christophe Cugge, director of
marketing, base station power amplifiers, NXP Semiconductors.

“Building on our 30-year heritage in RF power
devices, NXP’s eighth-generation LDMOS RF transistor portfolio helps our
customers resolve the often-conflicting demands of today’s advanced wireless
infrastructure and base station technology, delivering better performance and
higher efficiency at a much lower cost,” Cugge added.

The new Gen8 LDMOS transistors are designed to offer P1dB
powers up to 270 watts in SOT502-sized packages, and 400 watts in SOT539-sized
packages. The power density of NXP’s Gen8 LDMOS transistors helps reduce the
size and weight of Doherty amplifiers.

NXP claims that these enhancements will reduce total
expenditures related to cooling and operation


NXP will showcase its latest Gen8 LDMOS transistors at
next week’s MTT-S International Microwave Symposium 2012 in Montreal, Canada.

NXP has developed Gen8 LDMOS in association with key

The Gen8 transistors achieve excellent product
consistency through a design that uses less sensitive matching topologies, and
places resonance frequencies of the matching networks outside the band to limit
the impact of manufacturing variations on performance.

During manufacturing, the production line is calibrated
on resonance frequency before the start of each batch. During testing, binning
(gain and phase) is possible for sensitive Doherty designs, with several
options available to increase correlation with the application, including
Doherty testing for asymmetric transistors.

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