Toshiba launches new GaN semiconductor HEMT

Toshiba Corp announced the TGI1314-25L, a gallium nitride
(GaN) semiconductor High Electron Mobility Transistor (HEMT), the latest
addition to its power amplifier product family.


The TGI1314-25L, Toshiba’s new GaN HEMT for Ku-band satellite communication
application, operates in the 13.75GHz(1) to 14.5GHz range with output power of
25W.  The device features output power of 44.0dBm (typ.) with 39dBm input
power, linear gain of 8.0dB (typ.) and drain current of 2.5 Amps (typ.). The
new product is targeted to Satcom applications including very small aperture
terminals (VSAT).



The expansion of Toshiba’s GaN power amplifier family
brings higher gain and very efficient features to microwave designers, which
reduce heat sink requirements and enable smaller terminals and converters with
a full GaN HEMT line-up that includes drivers.  



Since Toshiba released
its 50W Ku-band product a few years ago, many customers have requested a full
line-up of GaN HEMTs, which will simplify the power supply design of
Solid-State Power Amplifiers (SSPA) and block up converters (BUC).



In addition, small output power applications, such as
VSAT, can benefit from GaN HEMTs, making fan-less or very small equipment
possible,” said Homayoun Ghani, business development manager, Microwave,
Logic, and Small Signal Devices, TAEC Discrete Business Unit.



In 2009, Toshiba announced the addition of the Extended
Ku-band TGI1314-50L to its GaN power amplifier family, which operates in the
13.75GHz to 14.5GHz range for Satcom to support SSPA applications. The
TGI1314-50L is now in mass production.



By Team
[email protected]