Samsung selects IDT low-power dual-port memory for GALAXY Tab. 10.1 LTE tablet PC


Integrated Device Technology (IDT), a provider of mixed-signal
semiconductor solutions, announced that its low-power dual-port memory has been
selected by Samsung for use in the GALAXY Tab. 10.1 LTE tablet PC.


The IDT 70P255 is a low power 8K x 16 Dual-Port Static RAM (DPSRAM). The
device provides two independent ports with asynchronous access for simultaneous
reads or writes to any location in memory, enabling the tablet’s baseband
processor (BP) and application processor (AP) to work in concert.


An automatic power down feature permits the device to enter a low-power
standby mode (3.6 uW typical) to save power and extend battery life when the
memory is not being accessed. Fabricated using IDT’s CMOS technology, these
devices operate on 27 mW of power.


The IDT 70Pxx series of devices is available in a 100-ball and 81-ball
0.5 mm pitch Ball Grid Array (BGA) with 1 mm thickness, optimized for wireless
handset and portable applications.


“Our low power memory products complement our highly efficient
power management and world-class timing solutions. We look forward to
continuing to support Samsung with our broad portfolio of mixed-signal
solutions,” said Arman Naghavi, vice president and general manager of the
Analog and Power Division at IDT.


Recently, Integrated Device Technology announced that it has released the world’s highest performance family of Gen 3 PCI
Express (PCIe) switches targeted at solid-state drive (SSD) storage arrays and
cloud computing applications.


The new family of switches builds upon IDT’s leadership in
high-performance, scalable PCIe Gen 1 and Gen 2 switches, supporting a capacity
up to 64 lanes and 16 ports with additional protocol enhancements for improved
efficiency and reduced power consumption.


By Team
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