NXP Semiconductors unveils LDMOS power transistors for small cell wireless base stations

Telecom Lead India: NXP Semiconductors has unveiled LDMOS power transistors designed for small cell wireless base stations.

With dedicated solutions for both picocell and microcell architectures — which average 1 to 2 W, and 8 to 12 W, respectively — the RF power transistors span frequency ranges from 700 MHz to 2.7 GHz and include the world’s first asymmetric MMICs, as well as low-cost, low-power plastic devices.

Delivering an optimal balance of energy efficiency and integration, NXP’s RF portfolio provides flexibility in designing scalable, cost-optimized systems.

“Small cells are emerging as a cost-effective approach to increase wireless network capacity and quality of service, when used as a complement to macro base stations. By offering a broad portfolio of energy-efficient LDMOS power transistors dedicated to picocells, microcells and active antenna systems, we’re providing the flexibility needed to build highly versatile, scalable small-cell solutions,” said Christophe Cugge, director of marketing, base station power amplifiers, NXP Semiconductors.

NXP has introduced monolithic microwave integrated circuits, including asymmetric MMICs, which provide more power efficiency at back-off and offer flexibility, particularly in Doherty configurations in microcells and antenna arrays.

The first MMIC based on NXP’s Gen7 LDMOS technology, the BLM7G22S-60PB, is released, with qualification samples of 7 new product types available. All 7 MMICs are dual path with two separate amplifiers, each with 30-dB gain and a certain power rating of P1 dB.

Ideal for dual-stage micro base stations where high integration is a priority, NXP’s family of symmetric and asymmetric MMICs offer a modular approach, allowing different power levels on each path, as well as better isolation between the two paths for better Doherty performance and stability.

NXP also offers plastic 10-W BLP7G22-10, providing 17 dB gain at 2.0 GHz, and the 7.5-W BLP7G27-07, providing 15.3 dB gain at 2.6 GHz, for final-stage picocell applications in a variety of configurations from Class A to Doherty.

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