The newest addition to the Airfast RF power solution is designed to survive > 65:1 VSWR, even with simultaneous overvoltage and overdrive stressing the amplifier and its RF power transistors. The efficiency of the Airfast devices is on average 65 percent, an improvement compared to module-based solutions, which typically range from 25 to 40 percent in efficiency.
Recently, Freescale started production of AFT09MS015N, a solution for the new class of 10W mobile radio designs.
Meanwhile, Freescale Semiconductor introduced the first 2W integrated power amplifier operating with a 5V supply and delivering more than 40 dB of gain to cover all frequency bands between 1500 MHz and 2700 MHz. The component supports any cellular standard operating at this frequency including GSM, 3G, 4G and LTE.
Freescale’s MMZ25333B is suitable for driver and pre-driver applications in macrocell base stations, and final-stage applications in small cells.
The MMZ25333B is a multi-stage power amplifier based on InGaP GaAs HBT technology and is housed in an industry-standard 4 mm QFN package.