Micron Technology announced it is shipping samples of its 1β (1-beta) DRAM chips to smartphone manufacturers and chipset partners.
Micron Technology has also achieved mass production readiness with the world’s most advanced DRAM technology node. Micron’s plant in Hiroshima, Japan, will be mass producing DRAM on 1β.

The US-based company is adding its next generation of process technology on its low-power double data rate 5X (LPDDR5X) mobile memory, delivering speed of 8.5 gigabits (Gb) per second.

Beyond mobile, 1β delivers the low-latency, low-power, high-performance DRAM that is essential to support highly responsive applications, real-time services, personalization and contextualization of experiences, from intelligent vehicles to data centers.

1β represents an advancement of the company’s leadership cemented with the volume shipment of 1α (1-alpha) in 2021. The node delivers around a 15 percent power efficiency improvement and more than a 35 percent bit density improvement1 with a 16Gb per die capacity.

“The launch of our 1-beta DRAM signals yet another leap forward for memory innovation, brought to life by our proprietary multi-patterning lithography in combination with leading-edge process technology and advanced materials capabilities,” said Scott DeBoer, executive vice president of technology and products at Micron.

Micron’s 1β node allows higher memory capacity in a smaller footprint — enabling lower cost per bit of data.

The low power per bit consumption of 1β process technology delivers the most power-efficient memory technology on the market for smartphones yet. This allows smartphone manufacturers to design devices with more efficient battery life.

The power savings are enabled by the implementation of JEDEC dynamic voltage and frequency scaling extensions core (eDVFSC) techniques on this 1β-based LPDDR5X. The addition of eDVFSC at a doubled frequency tier of up to 3,200 megabits per second provides improved power savings controls to enable more efficient use of power.