Analog Devices revealed the launch of an absorptive single-pole, double-throw (SPDT) switch — HMC1118LP3DE — for the 9-KHz to 13-GHz frequency band.
HMC1118LP3DE promises high isolation of 48 dB and low insertion-loss of 0.6 dB at 8-GHz operation.
The advantages of the new RF and microwave control product include one hundred times faster settling time over legacy GaAs (gallium-arsenide), ESD (electro-static discharge) protection of 2000 V against 250 V in GaAs, and the ability to extend the switch’s low frequency-end one thousand times lower than GaAs while maintaining high linearity.
Analog Devices said the HMC1118LP3DE also offers industry-leading RF power handling of 4 W in through and 0.5 W in hot-switching operating modes. Hot-switching power handling is more than two times better than competitive parts with similar RF bandwidth.
The HMC1118LP3DE is optimized for high-isolation and extremely flat transfer characteristics within a wide operating frequency range up to 13 GHz, while maintaining high signal fidelity down to 9 kHz.
The combination of features suits the switch for demanding test and measurement, automated test equipment, defense electronics, and wireless communication applications as a lower cost alternative to legacy GaAs switches, said Analog Devices.
